High-performance RF/mmWave components to 120 GHz: PAs, LNAs, distributed amps, switches, and custom MMICs for demanding electronics.
High-power RF/microwave passives: broadband couplers, combiners, resistors, terminations, and attenuators.
Cables & assemblies: shielded twisted pair; custom coax/triax & semi-rigid; multi-conductor & submarine-safe composite; Re-Flex, microwave assemblies; box-/board-level wiring.
High-power RF devices & pallets: GaN-on-SiC and LDMOS transistors for CW communications and pulsed radar, optimized for thermal and electrical efficiency.
RF interconnects: coax/triax & multipin connectors, adapters, harsh-environment/waterproof solutions, cryogenic assemblies (NbTi, CuNi, SS), medical, solderless; fast custom with no NRE or MOQ.
Integrated microwave/mmWave assemblies: amplifiers, receivers, attenuators/modulators, phase shifters & I-Q modulators, solid-state switches, and frequency sources (DTO, FLO, VCOs).
Compact RF/microwave filters & assemblies: miniaturized lumped-element designs, laser-tunable SMT filters, integrated assemblies to 50 GHz, and hermetic high-power packages.
RF/microwave inductors & micro-inductors for space, defense, avionics, industrial, and medical systems; ISO 9001 certified; MIL-PRF-15305/-83446 products.
RF/microwave filters, diplexers, and filter sub-assemblies DC–50 GHz, including quick-turn ceramic filters.
Coaxial switches, RF/microwave filters, precision attenuators, and other transmission-line components engineered for high reliability.
Coaxial connectors & adapters—standard and custom (N, SMA, TNC, BNC, SC), precision-turned components, and ultra-low-PIM cable assemblies. Made in the USA.
Rotary joints for RF, fiber-optic, data, and power: FO joints to 109 channels; non-contact RF to 100 GHz; contacting RF DC–120 GHz for commercial, industrial, and space.
RF/microwave signal sources and signal-processing modules serving military, commercial, industrial, and medical applications.
GaN-on-Si and CMOS RF semiconductors: SMT high-power switches and power transistors with low current draw, tolerant of high VSWR and hot-switching.
RF GaN HEMT bare dies and transistors. Customizable devices plus High-Power GaN PLL (HPGP) solutions.